TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination
| Agency: | ENERGY, DEPARTMENT OF |
|---|---|
| State: | California |
| Type of Government: | Federal |
| FSC Category: |
|
| NAICS Category: |
|
| Posted Date: | Jul 7, 2025 |
| Due Date: | Aug 7, 2025 |
| Solicitation No: | IL-13828 |
| Original Source: | Please Login to View Page |
| Contact information: | Please Login to View Page |
| Bid Documents: | Please Login to View Page |
Description
- Contract Opportunity Type: Special Notice (Original)
- Original Published Date: Jul 07, 2025 09:34 am PDT
- Original Response Date: Aug 07, 2025 11:00 am PDT
- Inactive Policy: 15 days after response date
- Original Inactive Date: Aug 22, 2025
- Initiative:
- Original Set Aside:
- Product Service Code:
-
NAICS Code:
- 334413 - Semiconductor and Related Device Manufacturing
-
Place of Performance:
Livermore , CAUSA
Opportunity:
Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop its Semiconductor Open Switch with pre-pulses elimination.
Background:
A Semiconductor Opening Switch (SOS) is a high-power pulse diode designed to interrupt currents at density levels of up to 10 kA/cm2 in less than 10 nanoseconds. Current state of the art SOSs are widely used as solid-state generators to produce high power laser light, x-rays, and neutron pulses. One of their drawbacks however is that their performance is compromised by the presence of pre-pulses. These unwanted pulses feature long duration time and slow rise time, which degrades the voltage pulse rise time, peak voltage, etc. of the SOS device. There is a need for a different SOS device structure that is able to suppress or eliminate these pre-pulses.
Description:
LLNL developed a novel SOS diode structure starting with a n-type silicon wafer. On the appropriate sides of the wafer, donor and acceptor dopants with specifically designed and optimized concentration profiles are diffused in the structure. Crucially, an extra n-region is introduced to the structure to address pre-pulses. The result is a SOS diode with an optimized p+/p/n-base/n+ structure, and an extra layer that has a gradient n-doping. The incorporation of this layer effectively suppresses the pre-pulses, increases peak voltage and reduces pulse rise time. This approach has been validated in optimization simulations.
Advantages/Benefits:
- Value Proposition: Improved performance of SOS diodes
- Vital for compact high voltage pulse generators
Potential Applications:
- Pulsed-power physics
- Compact high voltage pulse generators
- High power electronics
Development Status:
Current stage of technology development: TRL ☐ 0-2 ☒ 3-5 ☐ 5-9
LLNL has filed for patent protection on this invention.
LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.
Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process.
Note: THIS IS NOT A PROCUREMENT. Companies interested in commercializing LLNL's SOS with pre-pulses elimination should provide an electronic OR written statement of interest, which includes the following:
- Company Name and address.
- The name, address, and telephone number of a point of contact.
- A description of corporate expertise and/or facilities relevant to commercializing this technology.
Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's SOS with pre-pulses elimination.
The subject heading in an email response should include the Notice ID and/or the title of LLNL’s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below.
Written responses should be directed to:
Lawrence Livermore National Laboratory
Innovation and Partnerships Office
P.O. Box 808, L-779
Livermore, CA 94551-0808
Attention: IL-13828
- 7000 East Avenue
- Livermore , CA 94551
- USA
- Alex Hess
- hess12@llnl.gov
- Phone Number 9254231283
- Charlotte Eng
- eng23@llnl.gov
- Phone Number 9254221905
- Jul 07, 2025 09:34 am PDTSpecial Notice (Original)
See Also
bid # title closing date at base bid estimate bid walk/pre-bid conf dbe
City of Porterville
Due by 9/23/2026
Basic Information Title Septic Tank Pumping and Disposal Services in Santa Barbara, Monterey,
State Government of California
Due by 9/22/2026
RFx Name: BPM013370 RFx Begin Date (UTC+0): RFI - NOTICE OF FUNDING AVAILABILITY
County of San Diego
Due by 9/30/2026
Basic Information Title Request for Information (RFI) #26-004 - CBC Online Modernization/Replacement Agency
State Government of California
Due by 9/28/2026