Silicon and Silicon/Germanium Epitaxial Wafers
| Agency: | COMMERCE, DEPARTMENT OF |
|---|---|
| State: | Federal |
| Type of Government: | Federal |
| FSC Category: |
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| NAICS Category: |
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| Set Aside: | Total Small Business Set-Aside (FAR 19.5) |
| Posted Date: | Apr 30, 2026 |
| Due Date: | May 12, 2026 |
| Solicitation No: | 1333ND26QNB030152 |
| Original Source: | Please Login to View Page |
| Contact information: | Please Login to View Page |
| Bid Documents: | Please Login to View Page |
Description
APEX Accelerators are an official government contracting resource for small businesses. Find your local APEX Accelerator (opens in new window) for free government expertise related to contract opportunities.
APEX Accelerators are funded in part through a cooperative agreement with the Department of Defense.
The APEX Accelerators program was formerly known as the Procurement Technical Assistance Program (opens in new window) (PTAP).
- Contract Opportunity Type: Solicitation (Updated)
- Updated Published Date: Apr 30, 2026 09:08 am EDT
- Original Published Date: Apr 27, 2026 02:13 pm EDT
- Updated Date Offers Due: May 12, 2026 01:00 pm EDT
- Original Date Offers Due: May 12, 2026 01:00 pm EDT
- Inactive Policy: 15 days after date offers due
- Updated Inactive Date: May 27, 2026
- Original Inactive Date: May 27, 2026
-
Initiative:
- None
- Original Set Aside: Total Small Business Set-Aside (FAR 19.5)
- Product Service Code: 3670 - SPECIALIZED SEMICONDUCTOR, MICROCIRCUIT, AND PRINTED CIRCUIT BOARD MANUFACTURING MACHINERY
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NAICS Code:
- 334413 - Semiconductor and Related Device Manufacturing
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Place of Performance:
This solicitation is being amended to answer public questions raised and to update a minimum specification.
Question 1: For line items 1-7, could you please confirm the substrate diameter?
Answer 1: The substrate diameter is 100 mm.
Question 2: What is the preferred method of growth (1) CVD (Chemical Vapor Deposition) or (2) MBE (Molecular Beam Epitaxy).
Answer 2: (B) The government is not specifying the production method and any production method that yields wafers meeting all specifications including thickness, composition, and coherency would be acceptable. Vendors may elect to use different growth methods for different film stacks (e.g. MBE for thin stacks, and CVD for thick films).
Minimum specification addition: For SiGe films, the composition tolerance is 5 atomic percent. For example Si0.70Ge0.30 means Si0.70±0.05Ge0.30±0.05, and a film with a composition of Si0.67Ge0.33 would be within specification for a nominal Si0.70Ge0.30 requirement.
No additional changes have been made.
Please see attached document.
- ACQUISITION MANAGEMENT DIVISION 100 BUREAU DR.
- GAITHERSBURG , MD 20899
- USA
- Erik Frycklund
- erik.frycklund@nist.gov
- Apr 30, 2026 09:08 am EDTSolicitation (Updated)
- Apr 27, 2026 02:13 pm EDT Solicitation (Original)
Related Document
| Apr 27, 2026 | [Solicitation (Original)] Silicon and Silicon/Germanium Epitaxial Wafers |
| May 6, 2026 | [Solicitation (Updated)] Silicon and Silicon/Germanium Epitaxial Wafers |
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