Licensing Opportunity: Deterministic Atom Steering for Repeated Identical Defect Generation in the Scanning Transmission Electron Microscope
| Agency: | ENERGY, DEPARTMENT OF |
|---|---|
| State: | Tennessee |
| Type of Government: | Federal |
| FSC Category: |
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| NAICS Category: |
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| Posted Date: | Sep 11, 2024 |
| Due Date: | Oct 26, 2024 |
| Solicitation No: | 2024-09-11_B |
| Original Source: | Please Login to View Page |
| Contact information: | Please Login to View Page |
| Bid Documents: | Please Login to View Page |
Description
- Contract Opportunity Type: Special Notice (Original)
- All Dates/Times are: (UTC-04:00) EASTERN STANDARD TIME, NEW YORK, USA
- Original Published Date: Sep 11, 2024 09:48 am EDT
- Original Response Date: Oct 26, 2024 05:00 pm EDT
- Inactive Policy: Manual
- Original Inactive Date: Oct 27, 2024
- Initiative:
- Original Set Aside:
- Product Service Code:
- NAICS Code:
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Place of Performance:
Oak Ridge , TN 37830USA
Invention Reference Number: 202405646
Scanning transmission electron microscopes are useful for a variety of applications. Atomic defects in materials are critical for areas such as quantum photonics, magnetic storage, and catalysis. Traditional methods using scanning tunneling microscopes (STM) are limited by their slow speed, requirement for conductive surfaces, and low operating temperatures. This technology provides the ability to control these defects at the atomic level and is not limited to surfaces or conductive materials, opening many new possibilities for atomic-scale manufacturing.
Description
This technology is a method for deterministic atom steering for repeated identical defect generation in the scanning transmission electron microscope. This enables precise defect creation in layered materials, enhancing quantum photonics, storage, and catalysis. This technique involves the precise control of the STEM’s electron beam to move atoms from one initial position to a well-defined final position. The method relies on fast and repeated scanning of the electron probe, which allows for real-time monitoring and control of individual atomic movements. The method scans the electron probe between multiple positions to direct the movement of individual atoms and create specific defects with high precision. It allows monitoring of atomic movements in real-time using a high speed detector, usually an annular dark or bright field detector, and maintains atomic lattice information for repeated and precise movements over large areas.
Benefits
- Enables the precise creation and placement of atomic defects with high fidelity
- Allows for real-time monitoring and adjustment of atomic movements
- Applicable to both 2D and 3D materials, enhancing bulk material properties
- Can use standard STEM with minor retrofit
- Maintains the material’s atomic content; prevents damage or ejection of atoms
- Scalable – can create large-scale patterns of atomic defects for advanced material design
Applications and Industries
- Materials research and production
- STEM (scanning transmission electron microscope) manufacturers
- STEM users
- Quantum photonics
- Catalysis
- High-density memory
Contact
To learn more about this technology, email partnerships@ornl.gov or call 865-574-1051.
- Oak Ridge National Laboratory PO Box 2008
- Oak Ridge , TN 37831
- USA
- Leslie Smith
- smithlm@ornl.gov
- Phone Number 8653410373
- Sep 11, 2024 09:48 am EDTSpecial Notice (Original)
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