Homoepitaxially grown N-type and P-type 4H-SiC on Semi-Insulated 4H-SiC substrates

Synopsis:

NASA/NSSC has a requirement for Homoepitaxially grown N-type and P-type 4H-SiC on Semi-Insulated 4H-SiC substrates.

NASA/NSSC intends to issue a sole source contract to MSE Supplies LLC 4400 E Broadway BLVD STE 600 Tucson Arizona 85711- 3554 under the authority of FAR 13.106-1(b)(1)(i). It has been determined that MSE Supplies LLC is the sole provider of Homoepitaxially grown N-type and P-type 4H-SiC on Semi-Insulated 4H-SiC substrates

NASA/NSSC will be the procuring center for this effort. Performance will be located at NASA/ Glenn Research Center (GRC).

The Government intends to acquire commercial items and services using the provisions, clauses and procedures prescribed in FAR Part 12 and FAR Part 13.

The NAICS Code for this procurement is 334413

Interested organizations may submit their capabilities and qualifications to perform the effort in writing to the identified point of contact not later than 3:00 p.m. Central Standard Time on 11/29/2024. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether or not to conduct this procurement on a competitive basis. A determination by the Government not to compete this proposed effort on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the government. Oral communications are not acceptable in response to this notice. NASA Clause 1852.215-84, Ombudsman, is applicable.

The Center Ombudsman for this acquisition can be found at http://prod.nais.nasa.gov/pub/pub_library/Omb.html .

Primary Point of Contact: Kacey Hickman Procurement Specialist Kacey.l.hickman@nasa.gov

Secondary Point of Contact: Karen Artis Contracting Officer Karen.l.artis@nasa.gov