Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate

Agency: NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
State: Federal
Type of Government: Federal
FSC Category:
  • A - Research and development
NAICS Category:
  • 334413 - Semiconductor and Related Device Manufacturing
Set Aside: No Set aside used
Posted Date: Jul 6, 2026
Due Date: Jul 10, 2026
Solicitation No: 80NSSC26936816Q
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Description

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Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate
Active
Contract Opportunity
Notice ID
80NSSC26936816Q
Related Notice
Department/Ind. Agency
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Sub-tier
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Office
NASA SHARED SERVICES CENTER
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General Information
  • Contract Opportunity Type: Solicitation (Original)
  • Original Published Date: Jul 06, 2026 06:15 pm CDT
  • Original Date Offers Due: Jul 10, 2026 08:00 am CDT
  • Inactive Policy: 15 days after date offers due
  • Original Inactive Date: Jul 25, 2026
  • Initiative:
    • None
Classification
  • Original Set Aside: No Set aside used
  • Product Service Code: AJ12 - GENERAL SCIENCE AND TECHNOLOGY R&D SERVICES; GENERAL SCIENCE AND TECHNOLOGY; APPLIED RESEARCH
  • NAICS Code:
    • 334413 - Semiconductor and Related Device Manufacturing
  • Place of Performance:
Description

See the attached SOW.



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*PLEASE NOTE* THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED / ACCEPTED AT THIS TIME. A price quote alone generally does not provide sufficient information to evaluate a vendor's technical capability.


Attachments/Links
Contact Information
Contracting Office Address
  • JERRY HLASS ROAD, BLDG. 1111
  • STENNIS SPACE CENTER , MS 39529
  • USA
Primary Point of Contact
Secondary Point of Contact


History
  • Jul 06, 2026 06:15 pm CDTSolicitation (Original)
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