CHIPS- Nanometer-scale Planar Films and Measurements

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Contract Opportunity

SOURCES SOUGHT NOTICE

Notice ID: NIST-MML-26-SS02

Title: CHIPS- Nanometer-scale Planar Films and Measurements

GENERAL INFORMATION

This is a Sources Sought Notice ONLY and is issued for market research purposes in accordance with FAR Part 10. This notice does not constitute a Request for Proposal (RFP), Request for Quotation (RFQ), Invitation for Bids (IFB), or any commitment by the Government to issue a solicitation or award a contract.

The National Institute of Standards and Technology (NIST) will not pay for any information submitted in response to this notice. Submission of information is voluntary and will not result in any obligation on the part of the Government.

NO SOLICITATION DOCUMENTS EXIST AT THIS TIME

Requests for solicitation documents will not receive a response.

Respondents shall clearly mark any proprietary or restricted information. In the absence of such markings, NIST will assume unlimited rights to all technical data submitted.

CONTRACTING OFFICE

National Institute of Standards and Technology (NIST)

Acquisition Management Division

100 Bureau Drive, Mail Stop 1640

Gaithersburg, MD 20899-1640

BACKGROUND

The CHIPS Metrology Program develops and advances cutting-edge metrology capabilities for members of the U.S. semiconductor manufacturing ecosystem. This NIST-conducted research program works with device manufacturers, tool vendors, materials suppliers, and other organizations to address critical metrology gaps and spur innovation across seven grand challenge areas.

Additional information regarding the CHIPS Metrology Program is available at:

https://www.nist.gov/chips/research-development-programs/metrology-program

CHIPS Metrology researchers at NIST require high-quality thin oxide, nitride, and epitaxial germinide films on silicon wafers, along with associated metrology data. NIST is seeking potential vendors capable of providing wafers meeting the classes and technical characteristics described below.

Exact specifications for lot size, film thickness, deposition method, and metrology approach may be refined based on responses to this sources sought notice and may reflect vendor-recommended and optimized processes and measurement capabilities.

Thin film property measurements using fabrication-line-compatible X-ray characterization techniques and wafer mapping using optical characterization techniques will be required for each deposited wafer.

DESCRIPTION OF REQUIRED PRODUCTS AND SERVICES

NIST is seeking information from sources capable of providing solutions that meet the objectives described above and the following essential requirements.

CLASS 1: Oxide or Nitride Depositions and Measurements (Two Sets Required)

Description:

At least two available materials from the following list: HfO₂, TiN, ZrO₂, SiN

Quantity:

• At least 10 wafers (300 mm), or


• At least 15 wafers (200 mm)

Technical Specifications:

a. Substrate:

• 200 mm prime double-side polished silicon wafers, SEMI standards; or


• 300 mm prime double-side polished silicon wafers, SEMI standards

b. Film Deposition:

• Approximately 8 nm oxide or nitride film on silicon


• Less than 5% thickness uniformity across the wafer


• Deposited by atomic layer deposition (ALD) or equivalent method


• Thickness may be optimized between 5 nm and 15 nm based on vendor recipe

c. Wafer Characterization:

• X-ray wafer metrology characterization at five points per wafer (X-ray reflectivity or X-ray photoelectron spectroscopy)


• Optical characterization mapping at 100 points per wafer (spectroscopic ellipsometry or equivalent)

CLASS 2: Epitaxial SiGe on Silicon Wafers and Measurement Data (Two Sets Required)

Description:

At least two available germanium (Ge) concentrations in the range of 15% to 30%

Quantity:

• At least 10 wafers (300 mm), or


• At least 15 wafers (200 mm)

Technical Specifications:

a. Substrate:

• 200 mm prime double-side polished silicon wafers, SEMI standards; or


• 300 mm prime double-side polished silicon wafers, SEMI standards

b. Film Deposition:

• Approximately 20 nm epitaxial SiGe film on silicon


• Less than 5% thickness uniformity and less than 3% Ge composition uniformity across the wafer


• Deposited by molecular beam epitaxy (MBE), chemical vapor deposition (CVD), or equivalent


• Thickness may be optimized between 15 nm and 40 nm based on vendor recipe


• Germanium concentration between 15% and 30%, optimized to vendor recipe

c. Wafer Characterization:

• X-ray wafer metrology characterization at five points per wafer (X-ray reflectivity, high-resolution X-ray diffraction, or X-ray photoelectron spectroscopy)


• Optical characterization mapping at 100 points per wafer (spectroscopic ellipsometry or equivalent)

MARKET RESEARCH OBJECTIVES

The purpose of this Sources Sought Notice is to:

• Identify responsible sources capable of meeting the described wafer deposition and metrology requirements


• Determine the availability of small businesses, including socio-economic categories


• Understand industry capabilities, limitations, and optimization approaches


• Inform development of draft specifications and acquisition strategy


• Assess competitiveness of the requirement

Information received may be used to support acquisition strategy decisions, including potential set-aside determinations.

ANTICIPATED ACQUISITION

NIST anticipates issuing a Request for Quotation (RFQ) in the second quarter of FY 2026, with contract award anticipated no later than the fourth quarter of FY 2026.

RESPONSE INSTRUCTIONS

Interested parties shall submit a written capability statement addressing the following:

1. Company name, address, Unique Entity Identifier (UEI) number, CAGE code, and point-of-contact information


2. Business size and socio-economic status (if applicable)


3. Identification of equipment or services offered that meet the objectives described in this notice
   
   
   
   1. Manufacturer name
   
   
   2. Model number
   
   
   3. Technical specifications
   
   
   4. Authorized reseller status, if applicable
   
   
   
   


4. Description of product performance capabilities and customization options, including any limits to customization


5. Identification of any requirements that cannot be met and explanation as to why; include suggestions to improve competitiveness


6. Country of manufacture for proposed equipment and any anticipated changes in manufacturing location


7. Identification of any alternative NAICS codes believed to be more appropriate


8. Standard commercial terms and conditions of sale (delivery, FOB terms, warranty, extended warranty, manuals, installation, cleanup, etc.)


9. Published pricing, discounts, rebates, or links to publicly available pricing


10. Identification of public or private sector customers with similar equipment purchases


11. Identification of applicable contract vehicles (e.g., GSA FSS, GWACs), including contract numbers


12. Any other information the Government should consider for market research purposes

SUBMISSION REQUIREMENTS

• Submission Method: Email


• Email Address: donald.graham@nist.gov


• Format: Microsoft Word/Excel or PDF


• Page Limit: 12 pages maximum


• Font: Times New Roman, 11-point


• Paper Size: 8.5 x 11 inches


• Margins: Minimum 1 inch on all sides

Header and footer information that does not contain evaluative content may be included within the margin space.

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