Available for Licensing:High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies

Agency: ENERGY, DEPARTMENT OF
State: Idaho
Type of Government: Federal
FSC Category:
  • A - Research and development
NAICS Category:
  • 334413 - Semiconductor and Related Device Manufacturing
Posted Date: Mar 4, 2026
Due Date: Apr 20, 2026
Solicitation No: BA-1552
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Available for Licensing:High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies
Active
Contract Opportunity
Notice ID
BA-1552
Related Notice
Department/Ind. Agency
ENERGY, DEPARTMENT OF
Sub-tier
ENERGY, DEPARTMENT OF
Office
BATTELLE ENERGY ALLIANCE–DOE CNTR
General Information View Changes
  • Contract Opportunity Type: Special Notice (Updated)
  • Updated Published Date: Mar 04, 2026 01:30 pm MST
  • Original Published Date: Oct 23, 2025 02:17 pm MDT
  • Updated Response Date: Apr 20, 2026 12:00 am MDT
  • Original Response Date: Nov 20, 2025 12:00 am MST
  • Inactive Policy: 15 days after response date
  • Updated Inactive Date: May 05, 2026
  • Original Inactive Date: Dec 05, 2025
  • Initiative:
Classification
  • Original Set Aside:
  • Product Service Code: AJ13 - GENERAL SCIENCE & TECHNOLOGY R&D SVCS; GENERAL SCIENCE & TECHNOLOGY; EXPERIMENTAL DEVELOPMENT
  • NAICS Code:
    • 334413 - Semiconductor and Related Device Manufacturing
  • Place of Performance:
    Idaho Falls , ID 83401
    USA
Description

High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies



Description



INL researchers have successfully established the parameters necessary for the deposition of high-quality superconducting zirconium nitride (ZrN) using molecular beam epitaxy (MBE). Key parameters include growth rate, temperature, flux ratios of zirconium (Zr) and nitrogen (N), and the choice of substrate. These parameters significantly impact the crystalline quality of the ZrN, which in turn affects its physical properties. Additionally, novel methods have been developed to induce unconventional superconductivity in conventional superconductors like ZrN.



Key Benefits





  • Superior Quality: MBE allows for fine-tuned growth parameters, resulting in top-quality, single-crystal ZrN superconducting films.







  • Unconventional Superconductivity: Methods for inducing unconventional superconductivity in ZrN have been conceptualized, potentially enabling more fault-tolerant computing.







  • Novel Application: ZrN has not previously been deposited using MBE, offering a unique advantage over existing superconducting thin films, which are often polycrystalline.







  • Tunable Impurities, Defects, and stoichiometry: The precise control during deposition minimizes impurities and defects, enabling better performance and higher critical temperatures. Direct control of stoichiometry allows for tunable performance metrics such as critical field and temperature.





Market Applications





  • Quantum Computing: Superconducting ZrN thin films can be used as platforms for superconducting qubits, a key component in the development of quantum computers.







  • Epitaxial Superconducting Heterostructures: The high-quality, high-uniformity films can be used to create advanced structures needed for unconventional superconducting technologies with atomic layer precision at wafer scale.







  • Research and Development: The technology can be utilized by researchers and companies focused on advancing superconducting materials and their applications.







  • Fault-Tolerant Computing: Unconventional superconducting schemes based on this technology could lead to more robust and fault-tolerant computing systems.





This technology represents a significant advancement in the field of superconducting materials, with broad implications for quantum computing and other high-tech applications.




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Contact Information
Contracting Office Address
  • 1955 N Fremont Avenue
  • Idaho Falls , ID 83415
  • USA
Primary Point of Contact
Secondary Point of Contact


History

Related Document

Oct 23, 2025[Special Notice (Original)] Available for Licensing:High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies
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